Abstract
Ion-beam deposition (IBD) is a direct method for forming high-purity solid films on a substrate by irradiating a low-energy, mass-separated ion beam (ions of solid materials) in an ultra-high-vacuum environment [1-4]. By this method, we can easily obtain isotopically enriched high-purity metal or semi-conductor films. Furthermore, we can control the film properties by selecting the ion irradiation energy. These features are completely different from other conventional purification methods, such as floating-zone purification or arc melting in ultra-high vacuum. Currently, three terms have been used to denote this technique; ion-beam deposition [1,2,5], direct ion-beam deposition [3] and primary ion-beam deposition [4].
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Miyake, K. (2002). Ion-Beam Deposition. In: Waseda, Y., Isshiki, M. (eds) Purification Process and Characterization of Ultra High Purity Metals. Springer Series in Materials Processing. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56255-6_7
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DOI: https://doi.org/10.1007/978-3-642-56255-6_7
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