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Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots

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Nano-Optoelectronics

Part of the book series: NanoScience and Technology ((NANO))

Abstract

Quantum dots are currently of high interest, mainly because of their electronic properties characterized by discrete atom-like energy levels [1], which may e.g. be used for low-threshold room-temperature laser devices [2]. InAs quantum dots embedded in a GaAs matrix are particularly promising due to their simple preparation by self assembly, e.g. using molecular-beam epitaxy (MBE) [3] or metal-organic chemical-vapor deposition (MOCVD) [4].

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Authors
  1. Mario Dähne
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  2. Holger Eisele
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Editor information

Editors and Affiliations

  1. Institut für Experimentelle Physik II, Halbleiterphysik, Universität Leipzig, Linnéstrasse 5, 04103, Leipzig, Germany

    Marius Grundmann

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Dähne, M., Eisele, H. (2002). Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots. In: Grundmann, M. (eds) Nano-Optoelectronics. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56149-8_5

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  • DOI: https://doi.org/10.1007/978-3-642-56149-8_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62807-8

  • Online ISBN: 978-3-642-56149-8

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