Abstract
We present a new simulation tool for orientation-dependent etching of silicon. The implemented algorithm is based on a model proposed by Schröder [1], which can explain the convex corner undercutting in pure aqueous KOH solutions. Essential is the experimental observation that the so called fast etching planes, which hitherto were assumed to cause the characteristic shape of under-etched convex etchmask corners, are not really crystallographic planes. Referring to some basic examples we demonstrate that our simulation approach using this “step flow model of 3D structuring” is able to reproduce the detailed morphology of the etched structures
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References
H. Schröder, E. Obermeier, Workshop on Physical Chemistry of Wet Chemical Etching of Silicon, Holten, 1998, Book of Abstracts, pp 31–32
H. Schröder, PhD Thesis, Technical University of Berlin, 2000
Strasser, E., Selberherr, S., 123456 IEEE Trans. on CAD of Integrated Circuits and Systems, Vol. 14, 9, (1995), pp 1104–1114
Strasser, E., Selberherr, S., Proc. of SISDEP-93, Vienna, Austria, in Simulation of Semiconductor Devices and Processes, Eds.: S. Selberherr, H. Stippel, E. Strasser, (Springer Verlag, Wien, 1993), pp. 357–360, 1993
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Horn, A., Wachutka, G. (2002). Realistic Step Flow Model for Orientation-Dependent Wet Etching. In: Breuer, M., Durst, F., Zenger, C. (eds) High Performance Scientific And Engineering Computing. Lecture Notes in Computational Science and Engineering, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55919-8_40
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DOI: https://doi.org/10.1007/978-3-642-55919-8_40
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-42946-3
Online ISBN: 978-3-642-55919-8
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