Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model
We deal with a Quantum-Drift-Diffusion (QDD) model for the description of transport in semiconductors which generalizes the standard Drift-Diffusion model (DD) through extra terms that take into account some quantum dispersive corrections. We also study numerically the influence on the I-V curve of the electron effective mass, the barrier height and width, and of the ambient temperature. The performance of several linearization algorithms, i.e. a two Gummel-type iterations and the fully-coupled Newton method are also compared.
KeywordsBarrier Height Effective Mass Negative Differential Resist External Voltage Barrier Width
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