Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model

  • Stefano Micheletti
  • Riccardo Sacco
  • Paolo Simioni
Conference paper
Part of the Mathematics in Industry book series (MATHINDUSTRY, volume 4)


We deal with a Quantum-Drift-Diffusion (QDD) model for the description of transport in semiconductors which generalizes the standard Drift-Diffusion model (DD) through extra terms that take into account some quantum dispersive corrections. We also study numerically the influence on the I-V curve of the electron effective mass, the barrier height and width, and of the ambient temperature. The performance of several linearization algorithms, i.e. a two Gummel-type iterations and the fully-coupled Newton method are also compared.


Barrier Height Effective Mass Negative Differential Resist External Voltage Barrier Width 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • Stefano Micheletti
    • 1
  • Riccardo Sacco
    • 1
  • Paolo Simioni
    • 1
  1. 1.MOX — Modeling and Scientific Computing, Dipartimento di Matematica “F. Brioschi”MilanoItaly

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