A Microscopic Approach to the Mott—Hubbard Gap
We have studied the doped Mott insulator phase of the two-dimension Hubbard model from the intermediate to large interaction regimes. By introducing a rotationally invariant Stratonovich—Hubbard field we decouple the static spin components of the interaction. The static charge interaction is then treated by Hartree-Fock approximation in the presence of a random spin field. We sample random spin configurations by Monte Carlo simulation with the Metropolis updating algorithm. The Mott-Hubbard gap and static susceptibilities are studied at and away from half-filling at low temperature
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