Abstract
Optical bistable devices and logic gates show considerable promise for image and data processing. Non-linear semi-conductor etalon devices have become increasingly popular for research on switching at low powers and high speeds. In this respect gallium arsenide and related multiple-quantum-well structures (MAWS) have displayed an interesting advantage over other materials by operating at room temperature. Another key parameter in such applications is the time constant or equivalently the bandwith of such devices. In this work the speed of GaAs-AlGaAs MQWS optical devices has been measured at low and at room temperature using near infrared femtosecond optical pulses [1].
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References
A Migus, A. Antonetti, J. Etchepare, D. Hulin and A Orszag, J.Opt.Soc.Am.B. 2, 584 (1985)
A, Migus, A. Antonetti, D. Hulin, A Mysyrowicz, H.M. Gibbs, N. Peyghambarian and J.L. Jewell Appl.Phys.Lett, 46, 70 (1985)
D. Hulin, A. Mysyrowicz, A. Antonetti, A- Migus, W.T. Masselink, H. Morkoc, H.M. Gibbs and N. Peyghambarian, submitted to Phys.Rev.B Rapid Comm.
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© 1986 Springer-Verlag Berlin Heidelberg
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Migus, A. et al. (1986). An Ultrafast GaAs All-Optical Logic Gate. In: Gibbs, H.M., Mandel, P., Peyghambarian, N., Smith, S.D. (eds) Optical Bistability III. Springer Proceedings in Physics, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-46580-2_13
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DOI: https://doi.org/10.1007/978-3-642-46580-2_13
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