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Ultrathin Ferroelectric Films

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Ferroelectricity at the Nanoscale

Part of the book series: NanoScience and Technology ((NANO))

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Abstract

As we seen in Chap. 3.3 the Ginzburg conception of the soft mode implicates, that ferroelectric crystals and films are bulk systems.

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Notes

  1. 1.

    Recently, it was shown that phase transition in PVDF exists in ultrathin film [24].

  2. 2.

    Recent results on ferroelectric tunnel junction in the ultrathin BaTiO3 films (see Sect. 4.4) and results from strontium titanate films seem to have the same behavior, see [61]. It seems that it must be common tunneling phenomenon.

  3. 3.

    Private comment of A. Gruverman.

  4. 4.

    Even for epitaxial Pb(Zn0.2T0.8)O3 (PZT) thin films with thickness 35 nm, the domain switching and coercive field E expc  ≃ 5 × 107 Vm−1 (less that E intc  ≃ (1–1.5) × 108 Vm−1) are observed. The switching kinetics differs from KAI, but has no critical character [113].

  5. 5.

    For definite values of δ, λ and α taken from the literature, see below.

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Authors and Affiliations

  1. The Russian Academy of Sciences Laboratory for Nonlinear Crystals, Institute of Crystallography, Moscow, Russia

    Vladimir Fridkin

  2. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA

    Stephen Ducharme

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  1. Vladimir Fridkin
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  2. Stephen Ducharme
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Correspondence to Vladimir Fridkin .

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Fridkin, V., Ducharme, S. (2014). Ultrathin Ferroelectric Films. In: Ferroelectricity at the Nanoscale. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-41007-9_4

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