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Microscopic Bit-Level Wear-Leveling for NAND Flash Memory

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Mobile, Ubiquitous, and Intelligent Computing

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 274))

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Abstract

By microscopically observing widely used data files, we identified the considerable room for life time improvement in NAND flash memory, which is due to the discovery of a non-uniformity in bit-level data patterns. In an attempt to exploit the discovery, we propose a novel bit-level wear-leveling scheme. Instead of considering only the view of page-level or block-level, we incorporate the non-uniformity in data encoding patterns into wear-leveling scheme. Because of its orthogonality to the existing block-level wear-leveling approaches, our solution can be adopted over the existing solutions without considerable overhead and extend NAND flash’s life span up to 36% in case of SLC.

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Correspondence to Yong Song .

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© 2014 Springer-Verlag Berlin Heidelberg

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Song, Y., Hwang, W., Park, KW., Park, K.H. (2014). Microscopic Bit-Level Wear-Leveling for NAND Flash Memory. In: Park, J., Adeli, H., Park, N., Woungang, I. (eds) Mobile, Ubiquitous, and Intelligent Computing. Lecture Notes in Electrical Engineering, vol 274. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-40675-1_48

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  • DOI: https://doi.org/10.1007/978-3-642-40675-1_48

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-40674-4

  • Online ISBN: 978-3-642-40675-1

  • eBook Packages: EngineeringEngineering (R0)

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