Abstract
The chapter describes the principles of and reviews recent progress on the Optical Aharonov-Bohm effect in quantum dots focusing on type-II quantum dot structures. Type-II quantum dots have been predicted to display the Optical Aharonov-Bohm effect (OABE) due to the strong polarization of an exciton that results from the spatial separation of the electrons and holes in such systems. The Aharonov-Bohm effect for type-II II–VI Zn(Mn)Te/ZnSe quantum dots is the principal topic of this chapter, with additional discussion of InGaAs/GaAs, InP/GaAs and GeSi type-II quantum dots, in which these effects have also been observed.
Keywords
- Quantum Ring
- Dilute Magnetic Semiconductor System
- ZnSe Matrix
- Isoelectronic Center
- Electron Envelope Function
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Acknowledgements
B.D. McCombe acknowledges partial support from the National Science Foundation Grant: DMR 1008138, and the Office of the Provost, University at Buffalo. I.L. Kuskovsky acknowledges support from the National Science Foundation: DMR-1006050, and the Department of Energy, Office of Basic Energy Science (Division of Materials Science and Engineering), Award No. SC003739.
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Sellers, I.R., Kuskovsky, I.L., Govorov, A.O., McCombe, B.D. (2014). Optical Aharonov-Bohm Effect in Type-II Quantum Dots. In: Fomin, V. (eds) Physics of Quantum Rings. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-39197-2_11
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