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Transmission Electron Microscopy Characterization of Nanomaterials pp 375–425Cite as

High Resolution in STEM Mode: Individual Atom Analysis in Semiconductor Nanowires

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Abstract

Aberration-corrected scanning transmission electron microscopy (STEM) in its different advanced modes such as high-angle annular dark field (HAADF), annular bright field (ABF), and middle-angle bright field (MABF) coupled to electron energy-loss spectroscopy (EELS) allows for high-resolution analysis of nanomaterials and can identify their properties at atomic scale, even on individual atoms. Among those properties, not only the atomic chemical composition but also their chemical state (oxidation, valence states or even coordination states) or localized physical properties, as their associated band gap, can be obtained on individual atomic columns or individual atoms. In this chapter we describe the application of aberration-corrected STEM in its different application modes and related spectroscopies (such as EELS and EDX) in order to correlate the structure and chemical composition at the atomic scale with the growth mechanisms and physical properties of semiconductor nanowires (NWs).

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Authors and Affiliations

  1. Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, Bellaterra, CAT, Spain

    María de la Mata & Jordi Arbiol

  2. Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, CAT, Spain

    Jordi Arbiol

Authors
  1. María de la Mata
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  2. Jordi Arbiol
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Correspondence to Jordi Arbiol .

Editor information

Editors and Affiliations

  1. Center for Advanced Microstructures and Devices, Baton Rouge, Louisiana, USA

    Challa S.S.R. Kumar

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© 2014 Springer-Verlag Berlin Heidelberg

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de la Mata, M., Arbiol, J. (2014). High Resolution in STEM Mode: Individual Atom Analysis in Semiconductor Nanowires. In: Kumar, C. (eds) Transmission Electron Microscopy Characterization of Nanomaterials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-38934-4_9

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