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Optical Properties of Semiconductor Nanorods

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Physical Properties of Nanorods

Part of the book series: NanoScience and Technology ((NANO))

Abstract

Semiconductor nanorods are an exciting material for optical applications because their absorption and emission properties can be tuned by the nanorods size, aspect ratio, and composition. In this chapter we will discuss the in detail the electronic level structure and the time dynamics of the carrier relaxation processes which determine the optical behavior of nanorods. Experiments on single nanorods of single and heterostructured materials will be reviewed that demonstrate, for example, polarized and directional emission, and tuning of the emission wavelength via the nanorod size or the Stark-effect. Furthermore coupling and collective effects in nanorod arrays will be discussed and we will highlight some promising results towards practical applications of nanorods in light emitting or lasing devices.

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Authors and Affiliations

  1. Nanostructures, Istituto Italiano di Tecnologia, Via Morgeo 30, Genova, 16163, Italy

    Roman Krahne

  2. Nanochemistry, Istituto Italiano di Tecnologia, Via Morgeo 30, Genova, 16163, Italy

    Liberato Manna & Chandramohan George

  3. National Nanotechnology Laboratory (NNL), Nanoscience Institute of CNR, Via Arnesano, Lecce, 73100, Italy

    Giovanni Morello

  4. Departament de Química Inorgànica—Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, c/Martí i Franquès 1-11, Barcelona, 08028, Spain

    Albert Figuerola

  5. Department of Chemistry, University of Delhi, Delhi, 110007, India

    Sasanka Deka

Authors
  1. Roman Krahne
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  2. Liberato Manna
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  3. Giovanni Morello
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  4. Albert Figuerola
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  5. Chandramohan George
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  6. Sasanka Deka
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Correspondence to Roman Krahne .

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Krahne, R., Manna, L., Morello, G., Figuerola, A., George, C., Deka, S. (2013). Optical Properties of Semiconductor Nanorods. In: Physical Properties of Nanorods. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36430-3_2

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