Micro-Nano Scale Thermal Imaging Using Scanning Probe Microscopy

Abstract

Thermal transport in nanometer scale devices and structures has become an area of active research. A representative example of the nano devices and structures is the metal-oxide field effect transistors (MOSFETs), which have been the driving force of the semiconductor industry for the past two decades. The gate length of the MOSFET has been continuously reduced in order to achieve higher switching speed and lower manufacturing cost. This critical length has been shrunk to 85–90 run by 2002 and will approach 20–22 nm in 2013 [1]. These lengths are comparable to the scattering mean free paths of electrons and phonons. As a result, nanotransistors exhibit unique electron and phonon transport phenomena that have not been observed in macroscopic devices. Furthermore, as nanotransistors are miniaturized, the power density is increased, leading to localized self-heating and high operating temperatures that can reduce device speed and time to failure. Therefore, it is of both scientific and technological importance to study thermal transport in the nanoscale.