Nanoelektronik pp 149-223 | Cite as

Fernziele der Nanoelektronik

Part of the acatech DISKUSSION book series (ACATECHDISKUSSION)


Während der vergangenen vierzig Jahre folgte die Entwicklung der Mikroelektronik dem Moore#x2019;schen Gesetz, einem empirischen Gesetz, welches vorhersagt, dass sich die Bauelementedichte und die Leistungsfähigkeit monolithisch integrierter Siliziumschaltkreise in zeitlichen Abständen von 18 Monaten jeweils verdoppeln.1 Während dieser vierzig Jahre verringerten sich die Strukturgrößen von Transistoren von 10 Mikrometer auf etwa 30 Nanometer. In den letzten 25 Jahren entwickelte sich die siliziumbasierte komplementäre Metalloxid-Halbleitertechnologie (CMOS) zur Mainstreamtechnologie für digitale, analoge und Mixed-Signal-Anwendungen.


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