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Piezotronic Electromechanical Memories

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Piezotronics and Piezo-Phototronics

Part of the book series: Microtechnology and MEMS ((MEMS))

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Abstract

In this chapter, we treat the piezoelectrically modulated resistive switching device based on a piezotronic nanowire, through which the write/read access of the memory cell is programmed via electromechanical modulation. Adjusted by the strain-induced polarization charges created at the semiconductor/metal interface under externally applied deformation by the piezoelectric effect, the resistive switching characteristics of the cell can be modulated in a controlled manner, and the logic levels of the strain stored in the cell can be recorded and read out, which has the potential for integrating with NEMS technology to achieve micro/nanosystems capable for intelligent and self-sufficient multidimensional operations.

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Authors and Affiliations

  1. School of Materials Science, Georgia Institute of Technology, Atlanta, USA

    Zhong Lin Wang

  2. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China

    Zhong Lin Wang

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  1. Zhong Lin Wang
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© 2012 Springer-Verlag Berlin Heidelberg

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Wang, Z.L. (2012). Piezotronic Electromechanical Memories. In: Piezotronics and Piezo-Phototronics. Microtechnology and MEMS. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34237-0_6

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