Statistical Characterization of Flicker Noise Fluctuation of a Nano-Scale NMOS Transistor

  • Sarmista SenguptaEmail author
  • Soumya Pandit
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 143)


The statistical variability of flicker noise for a nano-scale NMOS transistor due to intra-die variations in channel length, oxide thickness and mobility has been characterized. This has been done through theoretical estimations as well Monte Carlo-HSPICE simulation technique. BSIM-SPICE process parameters have been chosen for characterization purpose. The present work explicitly depicts the dependence of flicker noise variability on various causes of variability and device design parameters. 45 nm CMOS process technology has been considered in the present work. The theoretical model can be effectively used for statistical characterization which is essential for robust analog and RF circuit design.


Flicker noise Intra-die process variability Channel length Oxide thickness Mobility Mean Standard deviation 



The authors thank the Centre for Research in Nanoscience and Nanotechnology, University of Calcutta and Department of Science and Technology, Govt. of India (under Fast Track Young Scientist Scheme) for supporting the research work financially.


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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Institute of Radio Physics and ElectronicsUniversity of CalcuttaKolkataIndia

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