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Dielectric Breakdown of Microelectronic and Nanoelectronic Devices

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Mechanics of Advanced Functional Materials

Part of the book series: Advanced Topics in Science and Technology in China ((ATSTC))

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Abstract

As great progress has been achieved in micro-fabrication and micro-processing technologies, the size of electronic devices has been scaled down to submicrometers. This is especially embodied in the Si metal-oxide-semiconductor (MOS)-based devices, e.g., chips and memories, obeying the well known Moore’s law, with the number of transistors on an integrated circuit doubling approximately every two years. To minimize the short-channel effect, the thickness of dielectric oxide in a MOS device is approaching a few nanometers (Stathis and DiMaria, 1999; Frank et al., 2001). In recent years, some basic functional components of many microelectronic devices, such as dielectric oxides in a MOS device, have been scaled down to the nanoscale in one or more dimensions.

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    Prof. Biao Wang

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Wang, B. (2013). Dielectric Breakdown of Microelectronic and Nanoelectronic Devices. In: Mechanics of Advanced Functional Materials. Advanced Topics in Science and Technology in China. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-33596-9_9

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