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Towards Post-CMOS Molecular Logic Devices

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Architecture and Design of Molecule Logic Gates and Atom Circuits

Part of the book series: Advances in Atom and Single Molecule Machines ((AASMM))

Abstract

The use of molecular devices in post-CMOS devices and structures is described. Particularly we demonstrate the fabrication and characterization of two-novel devices: a two-terminal device which exhibits a two-negative differential resistance peaks and a sub-10-nm-channel vertical molecular transistor which contains a molecular quantum-dot compound. We show that the latter device can be operated in two distinct modes: gate-controlled switch and gate-controlled hysteresis.

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Acknowledgements

This work was supported by the agency for Tashtiot program and the USAF fund.

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Authors and Affiliations

  1. Faculty of Exact Sciences and University, Center for Nano Science and Nanotechnology, Tel Aviv University, Tel-Aviv, 69978, Israel

    Roy Hakim, Elad. D. Mentovich & Shachar Richter

Authors
  1. Roy Hakim
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  2. Elad. D. Mentovich
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  3. Shachar Richter
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Corresponding author

Correspondence to Shachar Richter .

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Editors and Affiliations

  1. CIN2 (CSIC-ICN), Campus de la UAB, Bellaterra, 08193, Spain

    Nicolas Lorente

  2. , GNS, CNRS, Rue J. Marvig 29, Toulousse Cedex, 31055, France

    Christian Joachim

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Hakim, R., Mentovich, E.D., Richter, S. (2013). Towards Post-CMOS Molecular Logic Devices. In: Lorente, N., Joachim, C. (eds) Architecture and Design of Molecule Logic Gates and Atom Circuits. Advances in Atom and Single Molecule Machines. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-33137-4_2

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