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Ion Implantation

  • G. Langouche
  • Y. Yoshida
Chapter

Abstract

In this tutorial we describe the basic principles of the ion implantation technique and we demonstrate that emission Mössbauer spectroscopy is an extremely powerful technique to investigate the atomic and electronic configuration around implanted atoms. The physics of dilute atoms in materials, the final lattice sites and their chemical state as well as diffusion phenomena can be studied. We focus on the latest developments of implantation Mössbauer spectroscopy, where three accelerator facilities, i.e., Hahn-Meitner Institute Berlin, ISOLDE-CERN and RIKEN, have intensively been used for materials research in in-beam and on-line Mössbauer experiments immediately after implantation of the nuclear probes.

Keywords

Isomer Shift Hyperfine Interaction Collision Cascade Atomic Jump Defect Configuration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Department of Physics and AstronomyUniversity of Leuven, Institute of Nuclear and Radiation PhysicsLeuvenBelgium
  2. 2.Shizuoka Institute of Science and TechnologyFukuroi-cityJapan

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