Characterization of X-Ray Sensors and Io Monitor Device Testing for Primary and Secondary Intensities Measurement

  • Rafay Mehmood Siddiqui
  • Inam Ul Ahad
  • Syedah Sadaf Zehra
  • Anurag
Part of the IFMBE Proceedings book series (IFMBE, volume 49)

Abstract

This study is an attempt to characterize the specially designed x-ray sensors for the predesigned x-ray intensity monitoring device by evaluating their linearity and sensitivity. Two different sensors are designed using S8559 and S8193 photodiodes from Hamamatsu Photonics, Japan. These photodiodes coupled with Cesium Iodide (CsI) scintillator are used to convert x-ray intensities into variable voltage signals. The linearity and sensitivity of the two sensors are evaluated by finding the operating range of sensors under the same conditions and parameters. This has been accomplished by varying x-ray tube voltage and current and by varying position of sensor from fixed source (x-ray tube). The term sensors characterization indicates investigation of x-ray sensors behavior. For this purpose some experiments are developed in which x-ray sensor and x-ray Io device are examined. Computed Tomography (CT 500) machine which is used in Non Destructive Testing of objects generates the primary and secondary x-ray intensities.

Keywords

X-ray Io device Characterization of X-ray Io device Sensor Models S8193/S8559 

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Copyright information

© IFMBE 2013

Authors and Affiliations

  • Rafay Mehmood Siddiqui
    • 1
  • Inam Ul Ahad
    • 1
  • Syedah Sadaf Zehra
    • 1
  • Anurag
    • 2
  1. 1.Department of Biomedical EngineeringSir Syed University of Engineering and TechnologyKarachiPakistan
  2. 2.Mechanical and Process EngineeringFurtwangen University of Applied SciencesVillingen SchwenningenGermany

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