The EEM in Quantum Confined Optoelectronic Semiconductors in the Presence of Light Waves

  • Sitangshu Bhattacharya
  • Kamakhya Prasad Ghatak
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 167)


With the advent of nanophotonics, there has been a considerable interest in studying the optical processes in semiconductors and their nanostructures. It appears from the literature that the investigations have been carried out on the assumption that the carrier energy spectra are invariant quantities in the presence of intense light waves, which is not fundamentally true. The physical properties of semiconductors in the presence of light waves which change the basic dispersion relation are relatively less investigated in the literature. In this chapter we shall study the EEM in III–V, ternary and quaternary semiconductors and their nanostructure on the basis of newly formulated electron dispersion law under external photo excitation under different physical conditions.


Light Wave Band Model Surface Electric Field Photo Excitation Quaternary Material 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • Sitangshu Bhattacharya
    • 1
  • Kamakhya Prasad Ghatak
    • 2
  1. 1.Department of Electronics Systems Engineering, Nano Scale Device Research LaboratoryIndian Institute of ScienceBangaloreIndia
  2. 2.Department of Electronics and Communication EngineeringNational Institute of TechnologyAgartalaIndia

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