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Compositionally Graded III-Nitride Nanowire Heterostructures: Growth, Characterization, and Applications

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Handbook of Nanomaterials Properties

Abstract

This chapter is meant to serve as an introduction into the use of compositionally graded III-nitride nanowires for polarization-engineered devices. An overview of both polarization-doping and polarization-engineered devices is provided. Because III-nitride nanowire heterostructures grown by plasma-assisted molecular beam epitaxy are particularly well suited to take advantage of the benefits of polarization doping, their growth and use in polarization-doped devices are covered in detail.

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Authors and Affiliations

  1. Materials Science and Engineering Department, The Ohio State University, 2041 North College Road, 43201, Columbus, OH, USA

    Santino D. Carnevale & Roberto C. Myers

Authors
  1. Santino D. Carnevale
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  2. Roberto C. Myers
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Corresponding author

Correspondence to Santino D. Carnevale .

Editor information

Editors and Affiliations

  1. Nanoprobe Laboratory for Bio- & Nanotechnology and Biomimetics, Ohio State University, Columbus, Ohio, USA

    Bharat Bhushan

  2. Department of Biological and Environmental Engineering, Cornell University, Ithaca, New York, USA

    Dan Luo

  3. Division of Restorative, Prosthetic and Primary Care, The Ohio State University, College of Dentistry, Columbus, Ohio, USA

    Scott R. Schricker

  4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida, USA

    Wolfgang Sigmund

  5. Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina, USA

    Stefan Zauscher

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Carnevale, S.D., Myers, R.C. (2014). Compositionally Graded III-Nitride Nanowire Heterostructures: Growth, Characterization, and Applications. In: Bhushan, B., Luo, D., Schricker, S., Sigmund, W., Zauscher, S. (eds) Handbook of Nanomaterials Properties. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-31107-9_17

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