Physics of Direct Current Plasma-Enhanced Chemical Vapor Deposition

Chapter
Part of the NanoScience and Technology book series (NANO)

Abstract

Among various chemical vapor deposition methods, direct-current plasma-enhanced chemical vapor deposition is one of the most important methods to align carbon nanotubes. Highly ordered carbon nanotube arrays can be in situ grown by the method, widely being used in various chemical and biosensors. In this chapter, we introduce the equipment, physics, and experimental parameters of direct-current plasma-enhanced chemical vapor deposition to in situ grow carbon nanotube arrays.

Keywords

Catalyst Particle Plasma Etching Gate Valve Stage Tube Current Density Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Department of PhysicsBoston CollegeChestnut HillUSA
  2. 2.Department of PhysicsBoston CollegeChestnut HillUSA
  3. 3.Institute for Advanced Materials, Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhouPeople’s Republic of China

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