Assessment of the Model

  • Janusz Bogdanowicz
Part of the Springer Theses book series (Springer Theses)


In the previous chapters, we have developed a model to explain quantitatively how the reflectance of a silicon sample can be modified by doping and/or laser-injected carriers and heat. In this chapter, we evaluate the accuracy of the model on two types of samples, namely homogeneously doped samples and shallow doped layers.


Doping Concentration Plasma Component Decay Length Thermal Component Signal Wavelength 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.IMECLeuvenBelgium

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