Abstract
In the previous chapters, we have developed a model to explain quantitatively how the reflectance of a silicon sample can be modified by doping and/or laser-injected carriers and heat. In this chapter, we evaluate the accuracy of the model on two types of samples, namely homogeneously doped samples and shallow doped layers.
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Notes
- 1.
I would like to thank Duy Nguyen and Laurent Souriau for the layers they have fabricated for this study.
- 2.
Note that, contrary to Eq. (2.2), \(\Delta R_1\) is here defined in its complex number notation. We are aware of this slight inconsistency. It is, however, more convenient to write \(\Delta R_1\) and, consequently, \(\Delta R_\text{ ac}\), in complex notation so that the link between the behavior of the signal and its components is more readily observed.
- 3.
I want to thank Derrick Shaughnessy again for writing a measurement routine for the TP tool thanks to which an uncountable number of hours have been saved.
- 4.
Note that this can obviously only be true for a limited region of the offset curve, i.e. the amplitude does not diverge. What is observed in these cases is that the rise in amplitude is only sustained in the first few micrometers and is followed by the expected decaying amplitude.
- 5.
Attempts have been made to obtain better characterized fresh homogeneously doped substrates. However, NIST spreading resistance calibration standards [5] are no longer available and manufacturers seem to only sell batches of wafers and no single wafers. The samples of critical importance in this study (ultra-shallow junctions), however, have been fabricated during the study itself and properly monitored (surface oxide, substrate quality,...)
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Bogdanowicz, J. (2012). Assessment of the Model. In: Photomodulated Optical Reflectance. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-30108-7_6
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DOI: https://doi.org/10.1007/978-3-642-30108-7_6
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