Extension of the Transport Theory to Ultra-Shallow Doped Silicon Layers

  • Janusz Bogdanowicz
Part of the Springer Theses book series (Springer Theses)


In this chapter, we assume that a supra-bandgap modulated pump laser and a supra-bandgap constant probe laser shine on a non-homogeneously doped silicon sample with respective irradiances \(\Pi _\text{ pump}(x,y,t)\) and \(\Pi _\text{ probe}(x,y)\). We look at the free electron, free hole and temperature distributions generated in the sample.


Doping Concentration Decay Length Doping Profile Dope Layer High Doping Concentration 
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  1. 1.
    M.S. Mock, Analysis of Mathematical Models of Semiconductor Devices (Boole Press, Dublin, 1983)Google Scholar
  2. 2.
    A.H. Marshak, C.M. Vanvliet, Electrical-current and carrier density in degenerate materials with nonuniform band-structure. Proc. IEEE 72(2), 148–164 (1984). ISSN 0018–9219CrossRefGoogle Scholar
  3. 3.
    A.H. Marshak, Transport-equations for highly doped devices and heterostructures. Solid-State Electron. 30(11), 1089–1093 (1987)ADSCrossRefGoogle Scholar
  4. 4.
    R. Hull (ed.) Properties of Crystalline Silicon (INSPEC, London, 1999)Google Scholar
  5. 5.
    S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Wien, 1984)CrossRefGoogle Scholar
  6. 6.
    S.K. Sundaram, E. Mazur, Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses. Nat. Mater. 1(4), 217–24 (2002)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.IMECLeuvenBelgium

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