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Extension of the Transport Theory to Ultra-Shallow Doped Silicon Layers

  • Janusz Bogdanowicz
Chapter
Part of the Springer Theses book series (Springer Theses)

Abstract

In this chapter, we assume that a supra-bandgap modulated pump laser and a supra-bandgap constant probe laser shine on a non-homogeneously doped silicon sample with respective irradiances \(\Pi _\text{ pump}(x,y,t)\) and \(\Pi _\text{ probe}(x,y)\). We look at the free electron, free hole and temperature distributions generated in the sample.

Keywords

Doping Concentration Decay Length Doping Profile Dope Layer High Doping Concentration 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.IMECLeuvenBelgium

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