Abstract
In this chapter, we assume a small perturbation of the complex refractive index \(\tilde{n}(x,y,z,t)\) is somehow generated (e.g. by doping, optically injected carriers and/or heat,...) in a homogeneous silicon sample and we calculate how this perturbation impacts the reflectance \(R(x,y,t)\) of a probe laser shining on the sample.
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Notes
- 1.
Given the large refractive index contrast both at the air-oxide interface and at the oxide-silicon interface, multireflection formula [2] must be considered in the oxide layer (large reflection coefficients at both interfaces)
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© 2012 Springer-Verlag Berlin Heidelberg
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Bogdanowicz, J. (2012). Theory of Perturbation of the Reflectance. In: Photomodulated Optical Reflectance. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-30108-7_2
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DOI: https://doi.org/10.1007/978-3-642-30108-7_2
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