An Ultra Low Power RF Frontend of UHF RFID Transponder Using 65 nm CMOS Technology

  • Yongpan Wang
  • Chun Zhang
  • Ziqiang Wang
  • Yongming Li
Conference paper
Part of the Advances in Intelligent and Soft Computing book series (AINSC, volume 158)

Abstract

This paper presents the research about the RF frontend of a 0.6 V passive UHF RFID transponder, with Temperature Sensor (TPS) and Random Sequence Generator (RSG) as its digital load, using the TSMC 65 nm Mixed Signal RF SALICIDE Low-K IMD process. The sensitivity of the transponder is -19 dBm according to the simulated results. All of the blocks are based on 0.6 V DC supply voltage. The power consumption of the RF frontend of the transponder at 0.6 V is 656 nW.

Keywords

UHF RFID low voltage low power 65 nm 

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References

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Copyright information

© Springer-Verlag GmbH Berlin Heidelberg 2012

Authors and Affiliations

  • Yongpan Wang
    • 1
  • Chun Zhang
    • 1
  • Ziqiang Wang
    • 1
  • Yongming Li
    • 1
  1. 1.Institute of MicroelectronicsTsinghua UniversityBeijingChina

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