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Chalcogenides pp 3–34Cite as

Fundamentals of Amorphous Semiconductors

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 164))

Abstract

Fundamentals of amorphous semiconductors are reviewed starting with glass transition. Short-range and long-range order structure of typical chalcogenides are described. Concepts of negative correlation energy and valence alternation pairs are introduced. Anderson localisation and percolation in amorphous networks are discussed. The chapter is concluded by a description of experimental techniques to fabricate amorphous chalcogenides.

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Notes

  1. 1.

    Effect of thermal treatment on the intensity of the glass-transition features in the phase diagram is described in Sect. 1.2.

  2. 2.

    Sir Nevill F. Mott, P. W. Anderson and J. H. Van Vleck won the Nobel Prize in Physics in 1977 for their work on the electronic structure of magnetic and disordered systems, especially amorphous semiconductors.

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  1. Nanoelectronics Research Center, National Institute of Advanced Industrial Science and Technology, Higashi 1-1-1, Tsukuba, Ibaraki, 305-8562, Japan

    Alexander V. Kolobov & Junji Tominaga

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  1. Alexander V. Kolobov
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Correspondence to Alexander V. Kolobov .

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Kolobov, A.V., Tominaga, J. (2012). Fundamentals of Amorphous Semiconductors. In: Chalcogenides. Springer Series in Materials Science, vol 164. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28705-3_1

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