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Modeling of Low-Dimensional Semiconductors

  • Hilmi Ünlü
  • H. Hakan Gürel
  • Özden Akıncı
  • Mohamed Rezaul Karim
Chapter
Part of the NanoScience and Technology book series (NANO)

Abstract

In this chapter, we discuss the general methodology to carry out qualitatively reliable and quantitatively precise calculations of electronic band structure of heterostructures that are essential in the realistic modeling and prediction of device performance in technologically important semiconductor devices, which can proceed relatively independently of experiment.

Keywords

Near Neighbor Electronic Band Structure Valence Band Edge Band Offset Interface Strain 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

This work was partially supported by the Scientific and Technical Research Council of Turkey (TÜBİTAK) under Grant No: TBAG-105T463. Two of us, H. H. Gürel and Ö. Akıncı, greatly acknowledge the Ph.D. student fellowships by Turkish State Planning Agency (DPT). The authors would like to greatly acknowledge the computer usage of High Performance Computing Laboratory of Informatics Institute at stanbul Technical University.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Hilmi Ünlü
    • 1
    • 2
  • H. Hakan Gürel
    • 3
    • 4
  • Özden Akıncı
    • 4
  • Mohamed Rezaul Karim
    • 5
  1. 1.Computational Science Division, Informatics InstituteIstanbul Technical UniversityMaslak IstanbulTurkey
  2. 2.Department of Physics, Faculty of Science and LettersIstanbul Technical UniversityMaslak IstanbulTurkey
  3. 3.Department of PhysicsIstanbul Technical UniversityMaslak IstanbulTurkey
  4. 4.Computational Science Division, Informatics InstituteIstanbul Technical UniversityMaslak IstanbulTurkey
  5. 5.Department of Physics, Faculty of Science and LettersIstanbul Technical UniversityMaslak, IstanbulTurkey

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