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Radiation Study of SEE in ASIC Fabricated in 0.18μm Technology

  • Pan Dong
  • Long Fan
  • Suge Yue
  • Hongchao Zheng
  • Shougang Du
Part of the Advances in Intelligent and Soft Computing book series (AINSC, volume 145)

Abstract

The research on the radiation effects of ASIC has been the hot point in the field of the international aerospace devices. This paper developed a test system for the single event effects (SEEs), which was applied to test the radiation effects of some domestic ASIC chips. Based on the result, SEEs under different work conditions: high temperature, normal temperature, low voltage, normal voltage were analyzed. Thus the voltage and temperature effects on SEE can be studied. The test showed that the increasing temperature and decreasing voltage could affect SEEs, meanwhile the sensibility of the ASIC circuit to SEE will be enhanced. The high temperature and low voltage is the worst work condition to the ASIC circuit, and there is no latch-up on the work condition of high temperature and high voltage.

Keywords

Soft Error Normal Voltage Radiation Study Single Event Transient Single Event Upset 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag GmbH Berlin Heidelberg 2012

Authors and Affiliations

  • Pan Dong
    • 1
  • Long Fan
    • 1
  • Suge Yue
    • 1
  • Hongchao Zheng
    • 1
  • Shougang Du
    • 1
  1. 1.BeijingChina

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