Combined STM and Four-Probe Resistivity Measurements on Single Semiconductor Nanowires
Transport measurements on free-standing nanostructures with clean and reconstructed facets require an instrumentation based on electrical probes that scan materials at the atomic scale with fine tuning in the establishment of the electrical contact. We describe a multiple probe tunneling microscope that operates under a scanning electron microscope in ultra-high vacuum and fulfills these requirements thanks to a unique control system. We show how this instrument is well adapted to study the resistivity of semiconductor nanowires.
KeywordsScanning Tunneling Microscope Image Switch Unit Probe Scan Tunneling Microscope Single Semiconductor Resolution Scanning Tunneling Microscope
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