Abstract
The scientific and technical challenges involved in the building of the planar electrical connection of an atomic scale circuit to N electrodes (N > 2) on insulating substrates are presented. In the Nanoscience group of Toulouse, the UHV factory has been developed since ten years in order to realize under UHV the five levels of interconnections on insulating substrate, to characterize by NC-AFM the different steps and to measure the electrical properties of the realized device.
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Acknowledgments
The design and the realization of the UHV factory and the studies made with it was supported by European fundings : AtMol project “Atomic Scale and single Molecule Logic gate Technologies” (Contract No ICT-2009.8.7-270028), Artist project « Alternative routes toward information storage and transport at the atomic and molecular scale » (Contract No ICT-2007.8.0-243421), Pico-Inside project « Computing Inside a Single Molecule Using Atomic Scale Technologies » (Contract No IST-2004-2.3.4.2-15847), NaPa project “Emerging Nanopatterning Methods” (Contract No NMP4-CT-2003-500120), CHIC project “Consortium for Hamiltonian Intramolecular Computing” (Contract No IST-2001-33578), and French national funding : CPER 2007-2013 Campus Gaston Dupouy “Des nanomatériaux aux nanosciences moléculaires. et aux picotechnologies”, NanoSens (Contract No ANR-08-NANO-017), MolSiC (Contract No ANR-08-NANO-030), DiNaMo (Contract No ANR-05-NANO-014), CPER 2002-2007 “Nanosciences, Nanotechnologies et Nanomatériaux”.
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Martrou, D. et al. (2012). The DUF Project: A UHV Factory for Multi-Interconnection of a Molecule Logic Gates on Insulating Substrate. In: Joachim, C. (eds) Atomic Scale Interconnection Machines. Advances in Atom and Single Molecule Machines. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28172-3_4
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DOI: https://doi.org/10.1007/978-3-642-28172-3_4
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