Silicon Surface Conductance Investigated Using a Multiple-Probe Scanning Tunneling Microscope

  • Janik Zikovsky
  • Mark H. Salomons
  • Stanislav A. Dogel
  • Robert A. Wolkow
Conference paper
Part of the Advances in Atom and Single Molecule Machines book series (AASMM)

Abstract

A custom-built multiple probe scanning tunneling microscope (STM) was used to perform measurements of the surface conductivity of Si(111)-7 × 7 and H–Si(111)-1 × 1 surfaces. Metallic contacts with points spaced <1 μm, deposited via electron-beam lithography, were used as contact points for two probes, while a central STM tip imaged the region between the contacts. A novel imaging method measuring the fraction of the tunneling current flowing to each contact was used to image surface conductivity with nanometer resolution. Si(111)-7 × 7 was shown to be significantly more conductive than H–Si(111)-1 × 1. Additionally, the resistance of single atomic steps on the Si(111)-7 × 7 was imaged using this method.

Keywords

Scanning Tunneling Microscope Metal Contact Scanning Tunneling Microscope Imaging Dangling Bond Scanning Tunneling Microscope Experiment 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • Janik Zikovsky
    • 1
  • Mark H. Salomons
    • 2
  • Stanislav A. Dogel
    • 2
  • Robert A. Wolkow
    • 1
    • 2
  1. 1.Department of PhysicsUniversity of AlbertaEdmontonCanada
  2. 2.National Institute for NanotechnologyEdmontonCanada

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