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MRAM

  • Hanmin Jin
  • Terunobu Miyazaki
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 158)

Abstract

Magnetic memory possesses a great advantage of nonvolatility due to intrinsic magnetic property of memory cell used and has been studied for a long time. The developing order is Ferrite core memory, plane and wire memories using Permalloy thin film, bubble memory by Orthoferrite, and Magnetoresistive Random Access Memory or Magnetic Random Access Memory (MRAM) using Giant Magnetoresistance (GMR) or Tunnel Magnetoresistance (TMR). We will review on the MRAM focusing on the important reports contributed to the development of MRAM. Especially, we will explain in detail the issues of MRAM development using spin transfer torque switching.

Keywords

Tunnel Junction Dynamic Random Access Memory Resistance Random Access Memory Free Layer Magnetic Memory 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Department of PhysicsJilin UniversityChangchunPeople’s Republic of China
  2. 2.Advanced Inst. Materials ResearchTohoku UniversitySendaiJapan

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