Abstract
In order to investigate the role of self-heating effects on the electrical characteristics of sub-micron devices, we have implemented a Monte Carlo device simulator that includes the self-consistent solution of the heat transport equation, obtained in the framework of Extended Irreversible Thermodynamics. The lattice temperature is fed back into the electron transport solver through temperature-dependent scattering tables. Simulation results for a n + − n − n + diode are shown.
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Muscato, O., Di Stefano, V. (2012). Analysis of Self-Heating Effects in Sub-Micron Silicon Devices with Electrothermal Monte Carlo Simulations. In: Günther, M., Bartel, A., Brunk, M., Schöps, S., Striebel, M. (eds) Progress in Industrial Mathematics at ECMI 2010. Mathematics in Industry(), vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-25100-9_8
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DOI: https://doi.org/10.1007/978-3-642-25100-9_8
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