Short-Pulse Laser Diodes
Present research on GaN-based laser diodes is focused mainly on the extension of the emission wavelength range, especially towards green emission, and the improvement of maximum output power and efficiency. The principal device concept is the Fabry-Perot-type single-section ridge laser diode. Other device concepts, which have been extensively studied in the group-III-arsenide and -phosphide material systems, are scarcely implemented in the nitrides. However, the advance of GaN-based laser diodes as inexpensive and highly efficient sources of laser light in the visible and near-UV spectral range will enable new applications with special demands, such as single-mode emission, short-pulse generation or fast modulation. Hence, these applications will drive the need to go beyond the basic Fabry-Perot laser concept.
KeywordsLaser Diode Bias Voltage Negative Bias Saturable Absorber Pump Current
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