Many applications of GaN-based laser diodes require a stable output in pulsed or fast modulated operation and a high output power. Self-heating of the devices due to ohmic losses and non-radiative recombination is a limiting factor, as an increase in device temperature results in a reduction of output power, a redshift of the emission wavelength, and thermal lensing. Therefore it is crucial to investigate the mechanisms of self-heating in laser diodes.
KeywordsLaser Diode Thermal Resistance Center Wavelength Longitudinal Mode Slope Efficiency
- 1.Nichia Corporation, Data sheet NDHB510APA, http://www.nichia.co.jp/specification/en/product/ld/NDHB510APA-E.pdf
- 2.L.A. Coldren, S.W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995)Google Scholar
- 9.Q. Shan, Q. Dai, S. Chhajed, J. Cho, E.F. Schubert, Analysis of thermal properties of GaInN light-emitting diodes and laser diodes. Journal 108, 084504 (2010)Google Scholar
- 10.H. Morkoc, Handbook of Nitride Semiconductors and Devices: Materials Properties 1 Physics and Growth (Wiley-VCH, Weinheim, 2008)Google Scholar