Thermal Properties

  • Wolfgang G. Scheibenzuber
Part of the Springer Theses book series (Springer Theses)


Many applications of GaN-based laser diodes require a stable output in pulsed or fast modulated operation and a high output power. Self-heating of the devices due to ohmic losses and non-radiative recombination is a limiting factor, as an increase in device temperature results in a reduction of output power, a redshift of the emission wavelength, and thermal lensing. Therefore it is crucial to investigate the mechanisms of self-heating in laser diodes.


Laser Diode Thermal Resistance Center Wavelength Longitudinal Mode Slope Efficiency 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. 1.
  2. 2.
    L.A. Coldren, S.W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995)Google Scholar
  3. 3.
    C. Eichler, S. Schad, M. Seyboth, F. Habel, M. Scherer, S. Miller, A. Weimar, A. Lell,V. Härle, D. Hofstetter, Time resolved study of laser diode characteristics during pulsed operation. Physica Status Solidi C 0(7), 2283 (2003)CrossRefGoogle Scholar
  4. 4.
    G.M. Laws, E.C. Larkins, I. Harrison, C. Molloy, D. Somerford, Improved refractive index formulas for the Al. J. Appl. Phys. 89(2), 1108–1115 (2001)CrossRefADSGoogle Scholar
  5. 5.
    Y.P. Varshni, Temperature dependence of the energy gap in semiconductors. Physica 34(1), 149 (1967)CrossRefADSGoogle Scholar
  6. 6.
    B.W. Hakki, T.L. Paoli, cw degradation at 300 K of GaAs double-heterostructure junction lasers. II. Electronic gain. J. Appl. Phys. 44(9), 4113 (1973)CrossRefADSGoogle Scholar
  7. 7.
    W.G. Scheibenzuber, U.T. Schwarz, Fast self-heating in GaN-based laser diodes. Appl. Phys. Lett. 98, 181110 (2011)CrossRefADSGoogle Scholar
  8. 8.
    B. Schmidtke, H. Braun, U.T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, U. Strauss, Time resolved measurement of longitudinal mode competition in 405 nm (Al, In)GaN laser diodes. Physica Status Solidi C 6, S860–S863 (2009)CrossRefADSGoogle Scholar
  9. 9.
    Q. Shan, Q. Dai, S. Chhajed, J. Cho, E.F. Schubert, Analysis of thermal properties of GaInN light-emitting diodes and laser diodes. Journal 108, 084504 (2010)Google Scholar
  10. 10.
    H. Morkoc, Handbook of Nitride Semiconductors and Devices: Materials Properties 1 Physics and Growth (Wiley-VCH, Weinheim, 2008)Google Scholar
  11. 11.
    M. Mueller, M. Rattunde, G. Kaufel, J. Schmitz, J. Wagner, Short-pulse high-power operation of GaSb-based diode lasers. IEEE Photonics Technol. Lett. 21(23), 1770–1772 (2009)CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Fraunhofer Institute for Applied Solid State Physics (IAF)FreiburgGermany

Personalised recommendations