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A Comparison of Semiconductor Lasers

  • Karl F. RenkEmail author
Chapter
Part of the Graduate Texts in Physics book series (GTP)

Abstract

The simplest heterostructure laser is the double-heterostructure laser. A GaAs double-heterostructure consists of three layers: n-doped GaAlAs; GaAs; p-doped GaAlAs. It corresponds to two heterostructures, a GaAlAs/GaAs and a GaAs/GaAlAs heterostructure that have in common the GaAs layer. The GaAs layer forms a well — not a quantum well. The well width is so large that the electrons and the holes can, in principle, move freely in all three dimensions. The double-heterostructure also acts as a light guide. The successful realization of the double-heterostructure laser initiated the development of the semiconductor lasers with the more complex heterostructures that we discussed.

Keywords

Semiconductor Laser Threshold Current GaAs Layer Quantum Cascade Laser Gain Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Institut für Angewandte PhysikUniversität RegensburgRegensburgGermany

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