A Comparison of Semiconductor Lasers

  • Karl F. RenkEmail author
Part of the Graduate Texts in Physics book series (GTP)


The simplest heterostructure laser is the double-heterostructure laser. A GaAs double-heterostructure consists of three layers: n-doped GaAlAs; GaAs; p-doped GaAlAs. It corresponds to two heterostructures, a GaAlAs/GaAs and a GaAs/GaAlAs heterostructure that have in common the GaAs layer. The GaAs layer forms a well — not a quantum well. The well width is so large that the electrons and the holes can, in principle, move freely in all three dimensions. The double-heterostructure also acts as a light guide. The successful realization of the double-heterostructure laser initiated the development of the semiconductor lasers with the more complex heterostructures that we discussed.


Semiconductor Laser Threshold Current GaAs Layer Quantum Cascade Laser Gain Coefficient 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Institut für Angewandte PhysikUniversität RegensburgRegensburgGermany

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