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Basis of a Bipolar Semiconductor Laser

  • Karl F. RenkEmail author
Chapter
Part of the Graduate Texts in Physics book series (GTP)

Abstract

We treat the basis of bipolar semiconductor lasers. We discuss: condition of gain; joint density of states; gain coefficient; laser equation; bipolar character of the active medium. And we derive, by use of Planck’s radiation law, the Einstein coefficients for an ensemble of two-level systems that is governed by Fermi’s statistics.

Keywords

Conduction Band Valence Band Radiative Transition Spontaneous Emission Gain Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Institut für Angewandte PhysikUniversität RegensburgRegensburgGermany

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