Basis of a Bipolar Semiconductor Laser

  • Karl F. RenkEmail author
Part of the Graduate Texts in Physics book series (GTP)


We treat the basis of bipolar semiconductor lasers. We discuss: condition of gain; joint density of states; gain coefficient; laser equation; bipolar character of the active medium. And we derive, by use of Planck’s radiation law, the Einstein coefficients for an ensemble of two-level systems that is governed by Fermi’s statistics.


Conduction Band Valence Band Radiative Transition Spontaneous Emission Gain Coefficient 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Institut für Angewandte PhysikUniversität RegensburgRegensburgGermany

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