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Radiation Effects in GaN

  • Alexander Y. Polyakov
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 156)

Abstract

A review of electron, proton, and neutron damage in GaN and AlGaN is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects.

Keywords

Quantum Well Deep Level Transient Spectroscopy Radiation Defect Electron Beam Induce Current Hydride Vapor Phase Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

I would like to thank my long time colleagues with whom I have been working on radiation effects in III-nitrides, Prof. S.J. Pearton of the University of Florida, Prof. In-Hwan Lee of Chonbuk University in Korea, Dr. Amir Dabiran at SVT Technologies, Dr. Nikolai Smirnov and Dr. Anatoliy Govorkov at the Institute of Rare Metals, Dr. Nikolai Kolin at the Institute of Physical Chemistry in Obninsk for their help, support, and fruitful discussions. Also, useful discussions with Dr. D. C. Look and Dr. Z-Q. Fang at Wright State University are gratefully acknowledged. The work was supported in part by International Science and Technology Center ISTC grant #3870.

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© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Institute of Rare MetalsMoscowRussia

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