Skip to main content
SpringerLink
Log in

Radiation Effects in GaN

  • Chapter
  • First Online:
GaN and ZnO-based Materials and Devices

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 156))

Abstract

A review of electron, proton, and neutron damage in GaN and AlGaN is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. A. Ionascut-Nedelcsescu, C. Carlone, A. Houdayer, H.J. von Bardelleben, J.L. Cantin, S. Raymond, IEEE Trans. Nucl. Sci. 49, 2733 (2002)

    Article  Google Scholar 

  2. D.C. Look, D.C. Reynolds, J.W. Hemsky, J.R. Sizelove, R.L. Jones, R.J. Molnar, Defect donor and acceptor in GaN. Phys. Rev. Lett. 79(12), 2273–2276 (1997)

    Article  CAS  Google Scholar 

  3. J. Nord, K. Nordlund, J. Keininen, Molecular dynamics study of damage accumulation in GaN during ion beam irradiation. Phys. Rev. B. 68, 184104 (2003)

    Article  Google Scholar 

  4. S.O. Kucheyev, J.S. Williams, C. Jagadish, Effects of ion species on the accumulation of ion-beam damage in GaN. Phys. Rev. B. 64, 035202 (2001)

    Article  Google Scholar 

  5. D.W. Jenkins, J.D. Dow, M.-H. Tsai, J. Appl. Phys. 72, 4130 (1992)

    Article  CAS  Google Scholar 

  6. A.Y. Polyakov, M. Shin, J.A. Freitas, M. Skowronski, D.W. Greve, R.G. Wilson, On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy. J. Appl. Phys. 80(11), 6349–6354 (1996)

    Article  CAS  Google Scholar 

  7. J. Neugebauer, C.G. Van de Walle, Phys. Rev. B. 50, 8067 (1994)

    Article  CAS  Google Scholar 

  8. P. Boguslawski, E.I. Briggs, J. Bernholc, Phys. Rev. B. 51, 17255 (1995)

    Article  CAS  Google Scholar 

  9. D.C. Look, Z. Fang, L. Polenta, MRS Internet J. Nitride Semicond. Res. 5S1 (2000) paper W10.5

    Google Scholar 

  10. G.A. Umana-Membreno, J.M. Dell, G. Parish, B.N. Nener, L. Faraone, U.K. Mishra, 60Co g-irradiation on GaN Schottky diodes. IEEE Trans. Electron Dev. 50(12), 2326 (2003)

    Google Scholar 

  11. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, C.R. Lee, I-H. Lee, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, J.S. Wright, S.J. Pearton, Defects in electron and neutron irradiated n-GaN: disordered regions versus point defects, Abstracts of the Fall MRS 2006 Meeting: Symposium I: Advances in III-Nitrides Semiconductor Materials and Devices (MRS, Warrington, 2006) paper I7.46

    Google Scholar 

  12. K.H. Chow, L.S. Vlasenko, P. Johannesen, C. Bozdog, G.D. Watkins, Intrinsic defects in GaN. I. Ga sublattice defects observed by optically detected electron paramagnetic resonance. Phys. Rev. B 69, 045207 (2004)

    Google Scholar 

  13. L. Polenta, Z-Q. Fang, D.C. Look, On the main irradiation-induced defect in GaN. Appl. Phys. Lett. 76(15) 2086–2088 (2000)

    Google Scholar 

  14. F.D. Auret, S.A. Goodman, F.K. Koschnick, J.-M. Spaeth, B. Beaumont, P. Gibart, Appl. Phys. Lett. 74, 407 (1999)

    Article  CAS  Google Scholar 

  15. S.A. Goodman, F.D. Auret, F.K. Koschnick, J.-M. Spaeth, B. Beaumont, P. Gibart Radiation induced defects in MOVPE grown n-GaN. Mater. Sci. Eng. B 71, 100–103 (2000)

    Google Scholar 

  16. S.A. Goodman, F.D. Auret, F.K. Koschnick, J.-M. Spaeth, B. Beaumont, P. Gibart, Appl. Phys. Lett. 74(6), 809 (1999)

    Article  CAS  Google Scholar 

  17. F.D. Auret, S.A. Goodman, F.K. Koschnick, J.-M. Spaeth, B. Beaumont, P. Gibart, Appl. Phys. Lett. 73(25), 3745 (1998)

    Article  CAS  Google Scholar 

  18. M. Hayes, F.D. Auret, L. Wu, W.E. Meyer, J.M. Nel, M.J. Legodi, Electrical defects introduced during high-temperature irradiation of GaN and AlGaN. Phys. B, 340–342, 421–425 (2003)

    Article  Google Scholar 

  19. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, Appl. Phys. Lett. 63, 2676 (1993)

    Article  CAS  Google Scholar 

  20. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, S.J. Pearton, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, Cheul-Ro Lee, In-Hwan Lee, Neutron irradiation effects in undoped n-GaN Films. J. Vac. Sci. Technol. B25(2), 436–442 (2007)

    Google Scholar 

  21. A.Y. Polyakov, A.S. Usikov, B. Theys, N.B. Smirnov, A.V. Govorkov, F. Jomard, N.M. Shmidt, W.V. Lundin, Effects of proton implantation on electrical and recombination properties of n-GaN. Solid-State Electron. 44, 1971–1983 (2000)

    Article  CAS  Google Scholar 

  22. J. Bourgoin, M. Lannoo, Point Defects in Semiconductors II, Experimental Aspects (Springer, Berlin, 1983) chapter 6

    Google Scholar 

  23. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, A.V. Korulin, S.J. Pearton, Neutron transmutation doping of GaN. J. Vac. Sci. Technol. B. 28(3), 608–612 (2010)

    Article  CAS  Google Scholar 

  24. A. Chantre, G. Vincent, D. Bois, Phys. Rev. B. 23, 5335 (1981)

    Article  CAS  Google Scholar 

  25. G.M. Martin, A. Mitonneau, D. Pons, A. Mircea, D.W. Woodard, J. Phys. C. 13, 3855 (1980)

    Article  CAS  Google Scholar 

  26. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, Z.-Q. Fang, D.C. Look, R.J. Molnar, A.V. Osinsky, Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy. J. Appl. Phys. 91(10), 6580–6584 (2002)

    Article  CAS  Google Scholar 

  27. M. Linde, S.J. Uftring, G.D. Watkins, Optical detection of magnetic resonance in electron irradiated GaN. Phys. Rev. B. 55(16), R10177–10180 (1997)

    Article  CAS  Google Scholar 

  28. I.A. Buyanova, M. Wagner, W.C. Chen, B. Monemar, J.I. Lindstrom, H. Amano, I. Akasaki, Photoluminescence of GaN: effect of electron irradiation. Appl. Phys. Lett. 73(20), 2968–2970 (1998)

    Article  CAS  Google Scholar 

  29. K.H. Chow, G.D. Watkins, A. Usui, M. Mizuta, Detection of interstitial Ga in GaN. Phys. Rev. Lett. 85(13), 2761–2764 (2000)

    Article  CAS  Google Scholar 

  30. F.J. Sanchez, D. Basak, M.A. Sanchez-Garcia, E. Calleja, E. Munoz, I. Izpura, F. Calle, J.M.G. Tijero, B. Beaumont, P. Lorenzini, P. Gibart, T.S. Cheng, C.T. Foxon, J.W. Orton, MRS Internet J. Nitride Semicond. Res. 1(7), (1996)

    Google Scholar 

  31. A.Y. Polyakov, N.B. Smirnov, A.S. Usikov, A.V. Govorkov, B.V. Pushniy, Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films. Solid State Electron. 42, 1959 (1998)

    Article  CAS  Google Scholar 

  32. M.A. Reschikov, H. Morkoc, Luminescence properties of defects in GaN. J. Appl. Phys. 97, 061301 (2005)

    Article  Google Scholar 

  33. T. Ogino, M. Aoki, J. Appl. Phys. 19, 2395 (1980)

    Article  CAS  Google Scholar 

  34. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, S.J. Pearton, J.M. Zavada, R.G. Wilson, Proton implantation effects on electrical and luminescent properties of p-GaN. J. Appl. Phys. 94(5), 3069–3074 (2003)

    Article  CAS  Google Scholar 

  35. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, K.D. Shcherbatchev, V.T. Bublik, M.I. Voronova, S.J. Pearton, A. Dabiran, A.V. Osinsky, Neutron irradiation effects in p-GaN. J. Vac. Sci. Technol. B. 24(5), 2256–2261 (2006)

    Article  CAS  Google Scholar 

  36. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, J.M. Redwing, Deep traps in high resistivity AlGaN films. Solid State Electron. 42, 831 (1998)

    Article  CAS  Google Scholar 

  37. L.S. Berman, Purity Control of Semiconductors by the Method of Capacitance Spectroscopy (Electronic Integral Systems, St. Petersburg, 1995), p. 180.

    Google Scholar 

  38. P. Hacke, H. Nakayama, T. Detchprom, K. Hiramatsu, N. Sawaki, Deep levels in the upper band-gap region of lightly Mg-doped GaN. Appl. Phys. Lett. 68, 1362 (1996)

    Article  CAS  Google Scholar 

  39. G. Popovici, H. Morkoc, Growth and doping of defects in III-nitrides, in GaN and Related Materials II, ed. by S.J. Pearton (Gordon and Breach Science Publishers, the Netherlands, 1999) pp. 93–172 they produce blue band: my review on AlGaN

    Google Scholar 

  40. Z-Q Fang, J.W. Hemsky, D.C. Look, M.P. Mack, Electron-irradiation-induced deep level in GaN. Appl. Phys. Lett. 72(4), 448(1998)

    Google Scholar 

  41. B.R. Gossick, Disordered regions in semiconductors bombarded by fast neutrons. J. Appl. Phys. 30(8), 1214 (1959)

    CAS  Google Scholar 

  42. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, K.D. Shcherbatchev, V.T. Bublik, M.I. Voronova, I.-H. Lee, C.R. Lee, Fermi level pinning in heavily neutron irradiated GaN. J. Appl. Phys. 100(9), 093715–093719 (2006)

    Article  Google Scholar 

  43. W. Walukiewicz, J. Vac. Sci. Technol. B5(4), 1062 (1987)

    Google Scholar 

  44. J. Tersoff, J. Vac. Sci. Technol. B4(4), 1066 (1986)

    Google Scholar 

  45. K. Kuriyama, T. Tokumasu, Jun Takahashi, H. Kondo, M. Okada, Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN. Appl. Phys. Lett. 80 (18), 3328–3330 (2002)

    Google Scholar 

  46. V.N. Brudnyi, A.V. Kosobutskiy, N.G. Kolin, Sov. Phys. Semicond. 43(10), 1312 (2009) (in Russian)

    Google Scholar 

  47. V.V. Emtsev, V.Yu. Davydov, E.E. Haller, A.A. Klochikhin, V.V. Kozlovskii, G.A. Oganesyan, D.S. Poloskin, N.M. Shmidt, V.A. Vekshin, A.S. Usikov, Radiation-induced defects in n-type GaN and InN. Physica B 308–310, 58–61 (2001)

    Article  Google Scholar 

  48. N.M. Shmidt, D.V. Davydov, V.V. Emtsev, I.L. Krestnikov, A.A. Lebedev, W.V. Lundin, D.S. Poloskin, A.V. Sakharov, A.S. Usikov, A.V. Osinsky, Effects of annealing on defects in as-grown and g-ray irradiated n-GaN layers. Phys. Stat. Sol. (b) 216, 533–536 (1999)

    Article  CAS  Google Scholar 

  49. B.H. Rose, C.E. Barnes, Proton damage effects on light emitting diodes. J. Appl. Phys. 53, 1772–1780 (1982)

    Article  CAS  Google Scholar 

  50. C.A. Usui, H. Sunakawa, A. Sakai, A.A. Yamaguchi, Jpn. J. Appl. Phys. 36, L899 (1997).

    Article  CAS  Google Scholar 

  51. In-Hwan Lee, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, S.J. Pearton, Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers. Phys. Stat. Sol. (c), 3(6), 2087–2090 (2006)

    Google Scholar 

  52. K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H. Namita, S. Nagao, I. Fujimura, Phys. Stat. Sol. (a) 205, 1056 (2008)

    Article  CAS  Google Scholar 

  53. T. Wosinsky, J. Appl. Phys. 65, 1566 (1988)

    Article  Google Scholar 

  54. Y. Tokuda, Y. Matuoka, K. Yoshida, H. Ueda, O. Ishiguro, N. Soejima, T. Kachi, Evaluation of dislocation-related defects in GaN using deep-level transient spectroscopy. Phys. Stat. Sol. (c) 4(7), 2568–2571 (2007)

    Google Scholar 

  55. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, T.G. Yugova, C.R. Lee, I-H. Lee, N.G. Kolin, I.D. Merkurisov, V.M. Boiko, K.D. Scherbatchev, V.T. Bublik, M.I. Voronova, S.J. Pearton, Neutron irradiation effects on GaN films prepared by lateral overgrowth, Abstracts of the European Workshop on III-Nitride Semiconductor Materials, Heraklion, Crete, Greece, September 2006 (Heraklion University, Heraklion, 2006), pp. 91–92

    Google Scholar 

  56. A.Y. Polyakov, Structural and electronic properties of AlGaN, in GaN and Related Materials II, ed. by S. Pearton (Gordon and Breach, New York, 1999), pp. 173–233

    Google Scholar 

  57. L. Chernyak, A. Osinsky, G. Nootz, A. Schulye, J. Jasinski, M. Benamara, Z. Liliental-Weber, D.C. Look, R.J. Molnar, Appl. Phys. Lett. 77, 2695 (2000)

    Article  CAS  Google Scholar 

  58. E.B. Yakimov, P.S. Vergeles, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, In-Hwan Lee, Cheul Ro Lee, S.J. Pearton, Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN. Appl. Phys. Lett. 90, 152114 (2007)

    Google Scholar 

  59. E.B. Yakimov, P.S. Vergeles, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, In-Hwan Lee, Cheul Ro Lee, S.J. Pearton, Donor doping non-uniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth. Appl. Phys. Lett. 94(4), 042118-1–042118-3 (2008)

    Google Scholar 

  60. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, E.B. Yakimov, P.S. Vergeles, n-Hwan Lee, Cheul Ro Lee, S.J. Pearton, Effects of changing the thickness of laterally overgrown n-GaN on deep traps spectra. J. Vac. Sci. Technol. (B). 26(3), 990–994 (2008)

    Google Scholar 

  61. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, E.B. Yakimov, P.S. Vergeles, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, In-H. Lee, C.-R. Lee, S.J. Pearton, Neutron radiation effects in epitaxially laterally overgrown GaN films. J. Electron. Mater. 36(10), 1320–1325 (2007)

    Google Scholar 

  62. S.J. Pearton, GaN device processing, in GaN and Related Materials, ed. by S.J. Pearton (Gordon and Breach, New York, 1999), pp. 475–540

    Google Scholar 

  63. J.W. Ager, R.E. Jones, D.M. Yamaguchi, K.M. Yu, W. Walukiewicz, S.W. Li, E.E. Haller, H. Lu, W.J. Schaff, Phys. Stat. Sol. (b). 244, 1820 (2007)

    Google Scholar 

  64. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, N.V. Pashkova, S.J. Pearton, J.M. Zavada, R.G. Wilson, Proton implantation effects on electrical and optical properties of undoped AlGaN with high Al mole fraction. J. Vac. Sci. Technol. B21(6), 2500–2505 (2004)

    Google Scholar 

  65. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, N.G. Kolin, V.M. Boiko, D.I. Merkurisov, S.J. Pearton, Neutron irradiation effects in undoped n-AlGaN. J. Vac. Sci. Technol. B24(3), 1094–1097 (2006)

    Google Scholar 

  66. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, K.H. Baik, S.J. Pearton, J.M. Zavada, Changes in electrical and optical properties of p-AlGaN due to proton implantation. J. Vac. Sci. Technol. B22(5), 2291–2294 (2004)

    Google Scholar 

  67. B.D. White, M. Bataiev, S.H. Gross, X. Hu, A. Karmarkar, D.M. Fleetwood, R.D. Schrimpf, W.J. Schaff, L.J. Brillson, Electrical, spectral and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures. IEEE Trans. Nucl. Sci. 50(6) 1934 (2003)

    Google Scholar 

  68. X. Hu, A. Karmarkar, B. Jun, D.M. Fleetwood, R.D. Schrimpf, R.D. Geil, R.A. Weller, B.D. White, M. Bataiev, L.J. Brillson, U.K. Mishra, Proton irradiation effects in AlGaN/AlN/GaN high electron mobility transistors, IEEE Trans. Nucl. Sci. 50(6) 1791 (2003)

    Google Scholar 

  69. M.S. Shur, M.A. Khan, in GaN and Related Materials II, ed. by S.J. Pearton (Gordon and Breach Science, New York, 1999) pp.47–92

    Google Scholar 

  70. H. Miyamoto, Phys. Stat. Sol. (c). 3, 2254 (2006)

    Google Scholar 

  71. F. Gaudreau, P. Fournier, C. Carlone, S.M. Khanna, H. Tang, J. Webb, A. Houdayer, Transport properties of proton irradiated gallium nitride-based two-dimensional electron-gas system. IEEE Trans. Nucl. Sci. 49(6), 2702 (2002)

    CAS  Google Scholar 

  72. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, S.J. Pearton, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, Neutron irradiation effects on electrical properties and deep level spectra in undoped n-AlGaN/GaN heterostructures. J. Appl. Phys. 98, 033529-1–033529-6 (2005)

    Google Scholar 

  73. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, S.J. Pearton, A.M. Dabiran, A.M. Wowchak, B. Cui, A.V. Osinsky, P.P. Chow, N.G. Kolin, V.M. Boiko, D.I. Merkurisov, Electron irradiation of AlGaN/GaN and AlN/GaN heterojunctions. Appl. Phys. Lett. 93, 152101 (2008)

    Article  Google Scholar 

  74. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, A.M. Dabiran, A. M. Wowchak, B. Cui, A.V. Osinski, P.P. Chow, S.J. Pearton,Electrical properties and deep traps spectra in AlN/GaN and AlGaN/GaN heterojunctions, J. Appl. Phys. 104, 053702 (2008)

    Article  Google Scholar 

  75. X. Hu, B.X. Choi, H.J. Barnaby, D.M. Fleetwood, R.D. Schrimpf, S. Lee, S. Shojah-Ardalan, R. Wilkins, U. Mishra, R.W. Dettmer, The energy dependence of proton induced degradation in AlGaN/GaN HEMTs IEEE Trans. Nucl. Sci. 51(2), 293 (2004)

    CAS  Google Scholar 

  76. A. Rashmi, S. Kranti, S. Haldar, P.S. Gupta, Impact of strain relaxation of AlGaN layer on 2-DEG sheet charge density and current-voltage characteristics of lattice mismatched AlGaN/GaN HEMTs. Microelectron. J. 33(3), 205 (2002)

    Google Scholar 

  77. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, N.G. Kolin, V.M. Boiko, D.I. Merkurisov, S.J. Pearton, Effects of electron irradiation on GaN-based transistor structures, in the extended abstracts of the 6th Russian Conference “Nitrides of gallium, indium and aluminum: structures and devices, S-Petersburg, Ioffe Physico-Technical Institute, 2008

    Google Scholar 

  78. B. Luo, J.W. Johnson, F. Ren, K.K. Alums, C.R. Abernathy, S.J. Pearton, A.M. Dabiran, A.M. Wowchak, C.J. Polley, P.P. Chow, D. Shoenfeld, A.G. Baca, Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett. 80(4), 604 (2002)

    Google Scholar 

  79. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, In-H. Lee, J.H. Baek, N.G. Kolin, V.M. Boiko, D.I. Merkurisov, S.J. Pearton, Electron irradiation effects in GaN/InGaN multiple quantum well structures. J. Electrochem. Soc. 155(1), H31–H35 (2008)

    Google Scholar 

  80. A.P. Karmarkar, B. Jun, D.M. Fleetwood, D.D. Schrimpf, R.A. Weller, B.D. White, L.S. Brillson, U.K. Mishra, Proton irradiation effects on GaN-based high electron mobility transistors with Si-doped AlGaN and thick GaN cap layers. IEEE Trans. Nucl. Sci. 51(6), 3801 (2004)

    CAS  Google Scholar 

  81. S.J. Cai, J.S. Tang, R. Li, J. Wei, L. Wong, J.L. Chen, K.L. Wang, M. Chen, Y.F. Zhao, R.D. Schrimpf, J.C. Keay, K.F. Galloway, Annealing behavior of proton irradiated AlGaN/GaN high electron mobility transistors grown by MBE. IEEE Trans. Electron. Dev. 47, 304 (2000)

    Article  CAS  Google Scholar 

  82. Q. Wang, H.Q. Xu, P. Omling, C. Jang, G. Malmqvist, Transistor properties of proton-irradiated GaAs/AlGaAs two-dimensional electron gas structures. Nucl. Instrum. Methods Phys. Res. B 160, 33 (2000)

    Article  CAS  Google Scholar 

  83. B. Luo, J.W. Johnson, F. Ren, K.K. Allums, C.R. Abernathy, S.J. Pearton, R. Dwidevi, T.N. Fogarty, R. Wilkins, A.M. Dabiran, A.M. Wowchak, C.J. Polley, P.P. Chow, A.G. Baca, DC and RF performance of proton-irradiated AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett. 79(14), 2196 (2001)

    Google Scholar 

  84. B. Luo, J. Kim, F. Ren, J.K. Gillespie, R.C. Fitch, J. Sewell, R. Dettmer, G.D. Via, A. Crespo, T.J. Jenkins, B.P. Gila, A.H. Onstine, K.K. Allums, C.R. Abernathy, S.J. Pearton, R. Dwidevi, T.N. Fogarty, R. Wilkins, Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett. 82(9), 1428 (2003)

    Google Scholar 

  85. B. Luo, F. Ren, K.K. Allums, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, R. Dwivedi, T.N. Fogarty, R. Wilkins, R.C. Fitch, J.K. Gillespie, T.J. Jenkins, R. Dettmer, J. Sewell, G.D. Via, A. Crespo, A.G. Baca, R.J. Shul, Proton irradiation of MgO or Sc2O3 passivated high electron mobility transistors. Solid-State Electron. 47, 1015 (2003)

    Article  CAS  Google Scholar 

  86. B. Luo, J.M. Johnson, F. Ren, K.K. Allums, C.R. Abernathy, S.J. Pearton, A.M. Dabiran, A.M. Wowchak, C.J. Polley, P.P. Chow, D. Schoenfeld, A.G. Baca, Influence of 60Co g-rays on dc performance of AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett. 80(4), 604 (2002)

    Google Scholar 

  87. V. Tilak, B. Green, V. Kaper, H. Kim, T. Prunty, J. Smart, J. Shealy, L.F. Eastman, IEEE Electron Dev. Lett. 22(11), 504 (2001)

    Article  CAS  Google Scholar 

  88. I. Daumiller, D. Theron, C. Gaquiere, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, U. K. Mishra, I. P. Smorchkova, S. Keller, C. Nguyen, E. Kohn, IEEE Electron. Dev. Lett. 22, 62 (2001)

    Article  CAS  Google Scholar 

  89. U.K. Mishra, P. Parikh, Y.-F. Wu, Proc.IEEE 90, 1022 (2002).

    Google Scholar 

  90. C. Lee, H. Wang, J. Yang, L. Witkowski, M. Muir, M. Asif Khan, P. Saunier, Electron. Lett. 38, 924 (2002).

    Article  CAS  Google Scholar 

  91. O. Mitrofanov, M. Manfra, N.G. Weimann, Appl.Phys.Lett. 82, 4361 (2003).

    Article  CAS  Google Scholar 

  92. S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E. Wickenden, and R.L. Henry, IEEE Trans. Electron. Dev. 48, 465 (2001)

    Article  CAS  Google Scholar 

  93. B.M. Green, K.K. Chu, E.M. Chumbes, J.A. Smart, J.R. Shealy, L.F. Eastman, IEEE Electron. Dev. Lett. 21, 268 (2000)

    Article  CAS  Google Scholar 

  94. L.F. Eastman, V. Tilak, J. Smart, B.M. Green, E.M. Chumbes, R. Dimitrov, H. Kim; O.S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W.J. Schaff, J.R. Shealy, IEEE Trans. Electron Dev. 48, 479 (2001)

    Article  CAS  Google Scholar 

  95. X. Hu, A. Koudymov, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, M.S. Shur, R. Gaska, Appl. Phys. Lett. 79, 2832 (2001).

    Article  CAS  Google Scholar 

  96. B. Luo, J.W. Johnson, J. Kim, R.M. Mehandru, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, A.G. Baca, R.D. Briggs, R.J. Shul, C. Monier, J. Han, Appl. Phys. Lett. 80, 1661 (2002)

    Article  CAS  Google Scholar 

  97. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, V.N. Danilin, T.A. Zhukova, B. Luo, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, Deep traps in unpassivated and Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett. 83(13), 2608–2610 (2003)

    Article  CAS  Google Scholar 

  98. A.Y. Polyakov, N.B. Smirnov, B.P. Gila, M. Hlad, A.P. Gerger, C.R. Abernathy, S.J. Pearton, Studies of interface states in Sc2O3/GaN, MgO/GaN and MgScO/GaN structures. J. Electrochem. Soc. 154(2), H115–H118 (2007)

    CAS  Google Scholar 

  99. S.M. Khanna, D. Estan, A. Houdayer, H. C. Liu, R. Dudek, Proton radiation damage at low temperature in GaAs and GaN light emitting diodes. IEEE Trans. Nucl. Sci. 51(6), 3585–3594 (2004)

    Article  CAS  Google Scholar 

  100. F Gaudraeau, C. Cardone, A. Noudayer, S.M. Khamna, Spectral properties of proton irradiated GaN blue diodes. IEEE Trans. Nucl. Sci. 48, 1778–1784 (2001)

    Google Scholar 

  101. M. Osinsky, P. Perlin, H. Schone, A.H. Paxtone, E.W. Taylor, Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes. Electron. Lett. 33, 1252–1254 (1997)

    Article  Google Scholar 

  102. J. Grant, W. Cunningham, A. Blue, V. O’Shea, J. Vaitkus, E. Gaubas, M. Rahman, Nucl. Instr. Meth. Phys. Res. A. 546, 213 (2005)

    Article  CAS  Google Scholar 

  103. J. Grant, R. Bates, W. Cunningham, A. Blue, J. Melone, F. McEwan, J. Vaitkus, E. Gaubas, V. O’Shea, Nucl. Instr. Meth. Phys. Res. A 576, 60 (2007)

    Article  CAS  Google Scholar 

  104. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, E.A. Kozhukhova, I.M. Gazizov, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, A.V. Korulin, V.M. Zalyetin, S.J. Pearton, I.-H. Lee, A.M. Dabiran, P.P. Chow, Alpha particle detection with GaN Schottky diodes. J. Appl. Phys. 106(10), 103708 (2009)

    Google Scholar 

  105. R.G. Wilson, S.J. Pearton, C.R. Abernathy, J.M. Zavada, Thermal stability of implanted dopants in GaN. Appl. Phys. Lett. 66(17), 2238 (1995)

    CAS  Google Scholar 

  106. S.J. Pearton, C.B. Vartuli, J.C. Zolper, C. Yuan, R.A. Stall, Appl. Phys. Lett. 67, 1435 (1995)

    Article  CAS  Google Scholar 

  107. C.R. Abernathy, J.D. Mackenzie, S.J. Pearton, W.S. Hobson, Appl. Phys. Lett. 66, 1969 (1995)

    Article  CAS  Google Scholar 

  108. S.O. Kucheyev, M. Toth, M.R. Phillips, J.S. Williams, C. Jagadish, G. Li, Appl. Phys. Lett. 78, 34 (2001)

    Article  CAS  Google Scholar 

  109. A.Y. Polyakov, M. Shin, R.G. Wilson, M. Skowronski, D.W. Greve, S.J. Pearton, Ion implantation of Si, Mg and C into AlGaN. Solid-State Electron. 41, 703 (1997)

    Article  CAS  Google Scholar 

  110. K.A. Jones, C. Nguyen, M.A. Derenge, I. Batyrev, T.S. Zheleva, Electrical activation processes in Si and Mg implanted GaN”in the abstracts of the 8th International Conference on Nitride Semiconductors, October 18–23, 2009, Jeju Island, Korea, paper ThP37, p.1160

    Google Scholar 

  111. B.G. Svensson, A. Hallien, J. Wong-Leung, M.S. Janson, M.K. Linnarsson, A.Yu. Kuznetsov, G. Alfieri, U. Grossner, E.V. Monakhov, H.K. Nielsen, C. Jagadish, J. Grillenberger, Ion implantation processing and related effects in SiC. Mat. Sci. Forum. 527–529, 781–786 (2006)

    Article  Google Scholar 

  112. S.J. Pearton, C.R. Abernathy, P.W. Wisk, W.S. Hobson, F. Ren, Appl. Phys. Lett. 63, 2238 (1993)

    Google Scholar 

  113. J.C. Zolper, S.J. Pearton, C.R. Abernathy, C.B. Vartuli, Appl. Phys. Lett. 66, 3042 (1995)

    Article  CAS  Google Scholar 

  114. S.C. Binari, L.B. Rowland, W. Kruppa, H.B. Dietric, K. Doverspike, D.K. Gaskill, Electron. Lett. 30, 1248 (1994)

    Article  CAS  Google Scholar 

  115. S.M. Hearne, D.N. Jaimeson, C. Yang, S. Prawer, J. Salzman, O. Katz, Electrical characteristics of proton irradiated AlGaN devices. Nucl. Instrum. Methods. Phys. Res. B 190, 873–877 (2002)

    Article  CAS  Google Scholar 

  116. M. Lambsdorf, J. Kohl, J. Rosenzweig, A. Axmann, J. Schneider, Appl. Phys. Lett. 58, 1881 (1991)

    Article  Google Scholar 

  117. V.M. Rao, W.-P. Hong, C. Caneau, G.K. Chang, N. Papanicolau, H.B. Dietrich, J. Appl. Phys. 70, 3943 (1991)

    Article  CAS  Google Scholar 

  118. R. Wang, Y. Cai, W.C.W. Tang, K. M. Lau, K. J. Chen, Intergration of enhancement and depletion mode AlGaN/GaN MIS-HFET by fluoride-based plasma treatment. Phys. Stat. Sol. (a) 204(6) 2024–2027 (2007)

    Google Scholar 

Download references

Acknowledgements

I would like to thank my long time colleagues with whom I have been working on radiation effects in III-nitrides, Prof. S.J. Pearton of the University of Florida, Prof. In-Hwan Lee of Chonbuk University in Korea, Dr. Amir Dabiran at SVT Technologies, Dr. Nikolai Smirnov and Dr. Anatoliy Govorkov at the Institute of Rare Metals, Dr. Nikolai Kolin at the Institute of Physical Chemistry in Obninsk for their help, support, and fruitful discussions. Also, useful discussions with Dr. D. C. Look and Dr. Z-Q. Fang at Wright State University are gratefully acknowledged. The work was supported in part by International Science and Technology Center ISTC grant #3870.

Author information

Authors and Affiliations

  1. Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 119017, Russia

    Alexander Y. Polyakov

Authors
  1. Alexander Y. Polyakov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Alexander Y. Polyakov .

Editor information

Editors and Affiliations

  1. , Materials Science and Engineering, University of Florida, 100 Rhines Hall, Gainesville, 32611, USA

    Stephen Pearton

Rights and permissions

Reprints and permissions

Copyright information

© 2012 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Polyakov, A.Y. (2012). Radiation Effects in GaN. In: Pearton, S. (eds) GaN and ZnO-based Materials and Devices. Springer Series in Materials Science, vol 156. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23521-4_9

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-23521-4_9

  • Published:

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-23520-7

  • Online ISBN: 978-3-642-23521-4

  • eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

Publish with us

Policies and ethics

Search

Navigation