GaN HEMT Technology

Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 156)

Abstract

A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products. The final section introduces important areas anticipated for future GaN HEMT development: InAlN HEMTs, GaN-on-diamond, and heterointegration.

Keywords

Molecular Beam Epitaxy Gate Length Field Plate AlGaN Barrier Layer Sheet Charge Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Kopin CorporationTauntonUSA
  2. 2.Texas State University – San MarcosSan MarcosUSA

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