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N-Type Oxide Semiconductor Thin-Film Transistors

  • Pedro Barquinha
  • Rodrigo Martins
  • Elvira Fortunato
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 156)

Abstract

This chapter gives an overview about GIZO TFTs, comprising an introductory section about generic TFT structure and operation, different semiconductor technologies for TFTs – with special emphasis on AOSs and particularly on GIZO – and then some experimental results obtained for GIZO TFTs fabricated in CENIMAT. Thin-film transistors (TFTs) are important electronic devices which are predominantly used as On/Off switches in active matrix backplanes of flat panel displays (FPDs), namely liquid crystal displays (LCDs) and organic light emitting device (OLED) displays. Even if a-Si:H is still dominating the TFT market in terms of semiconductor technology, oxide semiconductors are emerging as one of the most promising alternatives for the next generation of TFTs, bringing the possibility of having fully transparent devices, low processing temperature, low cost, high performance and electrically stable properties [1, 2]. Amorphous oxide semiconductors (AOS) such as Gallium–Indium–Zinc oxide (GIZO) [3, 4], even if fabricated at temperatures below 150C, are currently capable of providing transistors with field-effect mobility (μFE) exceeding \(20\,{\mathrm{cm}}^{2}\,{\mathrm{V}}^{-1}\,{\mathrm{s}}^{-1}\), threshold voltage (V T) close to 0 V, On/Off ratios above 108, subthreshold swing (S) around 0. 20 V dec−1 and fully recoverable V T shift (ΔV T) lower than 0.5 V after 24 h stress with constant drain current of 10 μA.

Keywords

Passivation Layer Oxide Semiconductor Depletion Layer Back Surface Gate Electrode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

The authors thank the Microelectronic and Optoelectronic Materials Group in CENIMAT. Thanks are also due to the Multiflexioxides Project Consortium (NMP3-CT-2006–032231) and ORAMA Project Consortium (FP7-NMP-2009-LARGE-3). The authors also thank Portuguese Science Foundation (FCT-MCTES) for the funding through the projects PTDC/CTM/73943/2006, PTDC/EEA-ELC/64975/2006 and PTDC/CTM/099124/2008. Thanks are also due to the European Research Council for the ERC 2008 Advanced Grant (INVISIBLE contract number 228144) and IT R&D program of MKE (2006-S079–03, Smart window with transparent electronic devices) from ETRI Korea.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • Pedro Barquinha
    • 1
  • Rodrigo Martins
    • 1
  • Elvira Fortunato
    • 1
  1. 1.CENIMAT-I3N, Departamento de Ciência dos Materiais and CEMOP/UNINOVA, Faculdade de Ciências e Tecnologia, FCTUniversidade Nova de LisboaLisboaPortugal

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