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InxAl1-xAs: dielectric constant

Semiconductors - New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds
  • E. C. F. da Silva
Part of the Landolt-Börnstein - Group III Condensed Matter book series (volume 44E)

Abstract

This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.

It deals with the dielectric constant of InxAl1-xAs.

Contained Elements: Al-As-In

Parent documents:

SpringerMaterials home

Volume III/44E

Keywords

semiconductor physical property 

References

  1. 09Y.
    Yoon, J.J., Ghong, T.H., Byun, J.S., Kang, Y.J., Kim, Y.D., Kim, H.J., Chang, Y.C., Song, J.D.: Appl. Surface Science 256 (2009) 1031.ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • E. C. F. da Silva
    • 1
  1. 1.Laboratorio de Novos Materiais SemicondutoresUniversidade de Sao PauloButanta, Sao PauloBrazil

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