Abstract
This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.
It deals with the dielectric constant of InAsxSb1-x.
Contained Elements: As-In-Sb
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References
Kim, T.J., Yoon, J.J., Hwang, S.Y., Aspnes, D.E., Kim, Y.D., Kim, H.J., Chang, Y.C., Song, J.D.: Appl. Phys. Lett. 95 (2009) 111902.
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© 2012 Springer-Verlag Berlin Heidelberg
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da Silva, E.C.F. (2012). InAsxSb1-x: dielectric constant. In: Rössler, U. (eds) New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds. Landolt-Börnstein - Group III Condensed Matter, vol 44E. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23415-6_49
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DOI: https://doi.org/10.1007/978-3-642-23415-6_49
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-23414-9
Online ISBN: 978-3-642-23415-6