GaAs: electro-optic coefficient

Abstract

This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.

It deals with the electro-optic coefficient of GaAs.

Contained Elements: As-Ga

Parent documents:

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Volume III/44E

substance:	gallium arsenide (GaAs)
property:	electro-optic coefficient (optical properties)

electro-optic coefficient

For the electro-optic coefficient d ₁₄ measured by means of reflectance anisotropy spectroscopy at T = 300 K, see Fig. 1 [10P].

Fig. 1

GaAs. Real (full line) and imaginary (dashed line) electro-optic coefficient (d ₁₄) for GaAs at room temperature [10P]. The values below the band gap (star symbols) are taken from ref. [92B]. The vertical lines indicate the energy of critical points.