Abstract
This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.
It deals with the conduction-band offsets and valence-band offsets of GaAs.
Contained Elements: As-Ga
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References
Yi, W., Narayanamurti, V., Lu, H., Scarpulla, M.A., Gossard, A.C.: Phys. Rev. B 81 (2010) 235325.
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da Silva, E.C.F. (2012). GaAs: conduction-band offsets, valence-band offsets. In: Rössler, U. (eds) New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds. Landolt-Börnstein - Group III Condensed Matter, vol 44E. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23415-6_34
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DOI: https://doi.org/10.1007/978-3-642-23415-6_34
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-23414-9
Online ISBN: 978-3-642-23415-6