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AlSb, wurtzite modification: energy gap

Semiconductors - New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds
  • E. C. F. da Silva
Part of the Landolt-Börnstein - Group III Condensed Matter book series (volume 44E)

Abstract

This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.

It deals with the energy gap of AlSb, wurtzite modification.

Contained Elements: Al-Sb

Parent documents:

SpringerMaterials home

Volume III/44E

Keywords

semiconductor physical property 

References

  1. 10D.
    De, A., Pryor, C.E.: Phys. Rev. B 81 (2010) 155210.ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • E. C. F. da Silva
    • 1
  1. 1.Laboratorio de Novos Materiais SemicondutoresUniversidade de Sao PauloButanta, Sao PauloBrazil

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