AlP, zincblende modifiction: interband transition energies

Semiconductors - New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds
  • E. C. F. da Silva
Part of the Landolt-Börnstein - Group III Condensed Matter book series (volume 44E)


This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.

It deals with the interband transition energies of AlP, zincblende modifiction.

Contained Elements: Al-P

Parent documents:

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Volume III/44E


semiconductor physical property 


  1. 06C.
    Chantis, A.N., van Schilfgaarde, M., Kotani, T.: Phys. Rev. Lett. 96 (2006) 086405.ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • E. C. F. da Silva
    • 1
  1. 1.Laboratorio de Novos Materiais SemicondutoresUniversidade de Sao PauloButanta, Sao PauloBrazil

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