Abstract
We present a theoretical model for design and analysis of semiconductor quantum dot (QD) array-based intermediate band solar cell (IBSC). The plane wave method with periodic boundary conditions is used in expansion of the k⋅p Hamiltonian for calculation of the electronic and optical structure of InAs/GaAs QD array. Taking into account realistic QD shape, QD periodicity in the array, as well as effects like band mixing between states in the conduction and valence band, strain and piezoelectric field, the model reveals the origin of the intermediate band formation inside forbidden energy gap of the barrier material. Having established the interrelation between QD periodicity and the electronic structure across the QD array Brillouin zone, conditions are identified for the appearance of pure zero density of states regions that separate intermediate band from the rest of the conduction band. For one realistic QD array, we have estimated all important absorption spectra in IBSC, and most important, radiative and nonradiative scattering times. Under radiative limit approximation, we have estimated efficiency of such IBSC to be 39%.
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Acknowledgements
The author wishes to thank to A. R. Adams FRS, M. Blake, M. Califano, N. M. Harrison, Z. Ikonić, T. S. Jones, A. Luque, A. Marti and E. P. O’Reilly for many useful discussions and suggestions. He would also like to thank to N. Vukmirović for enlightening discussions regarding the methods for quantum dot electronic structure calculations and for his work on development ofthe kppw code. The author is grateful to STFC Energy Strategy Initiative for financial support.
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Tomić, S. (2012). Modelling of Quantum Dots for Intermediate Band Solar Cells. In: Cristóbal López, A., Martí Vega, A., Luque López, A. (eds) Next Generation of Photovoltaics. Springer Series in Optical Sciences, vol 165. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23369-2_9
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