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Employment of high Resolution RBS to characterize ultrathin transparent electrode in high efficiency GaN based Light Emitting Diode

  • Grace Huiqi Wang
  • Taw Kuei Chan
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Abstract

GaN based light emitting diodes (LEDs) have attracted significant attention for use in solid state lighting. The high efficiency of LEDs has provided substantial energy savings and environmental benefits in a number of applications. A thermally stable and highly transparent low resistivity electrode is important for the fabrication of high brightness LED. Technological advances in microelectronics, optoelectronics and photonics rely on the use of precisely manufactured thin film structures (<10nm) in the LED electrodes. Recent advent of nanotechnology demands the ability to fully and nondestructively characterize such films in the monolayer range. In this work, we present a new metallization scheme to reduce the contact resistance and enhance current injection into the LED for improved light extraction, using excimer laser irradiation. Various techniques, including Rutherford backscattering, transmission electron microscopy and UV-Vis spectroscopy techniques are used to study the contact properties of the thin film electrodes.

Keywords

Rapid Thermal Annealing Rutherford Backscatter Spectrometry Laser Annealing Focal Plane Detector Excimer Laser Irradiation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • Grace Huiqi Wang
    • 1
  • Taw Kuei Chan
    • 2
  1. 1.Institute of Materials Research and Engineering (IMRE)SingaporeSingapore
  2. 2.Physics DepartmentNational University of Singapore (NUS)SingaporeSingapore

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