The use of Focused Ion Beam to Build Nanodevices with Graphitic Structures
The modification of samples using focused ion beam (FIB) is a very powerful technique in many areas of material science, especially on modification and construction of nanodevices. The aim of this work is the creation of defects, fabrication of ordered patterns and direct deposition of Pt contacts on graphitic structures (from few layers graphene to many layers graphite) by using a Ga+ FIB source together with a field emission gun scanning electron microscope (FEG-SEM) in a dual beam platform. Using this platform, FIB capabilities for fabrication of nanodevices for scientific and technological development are investigated. Micro- Raman Spectroscopy was used to track the changes caused by these fabrication processes by analyzing the ratio between the defect induced Raman D band and the structural G band. This approach provides information about the performance and the damages caused by dual beam techniques when used on graphene samples for device applications.
KeywordsDwell Time Graphene Sheet Raman Spectroscopy Graphitic Structure Atomic Force Microscopy Phase Image
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